Epitaxy & CVD

Epitaxy of silicon and its various compounds is one of the basic processes in semiconductor manufacturing. Even on larger time scale silicon will not cease to be the dominating and best-known material in microelectronics.

Linde Nippon Sanso has a comprehensive offering of gases, equipment and services to supply your CVD tools and make your key processes work now and in future.

Please refer to our product catalogue or:
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Productgroup		Product
Ammonia		Ammonia 3.8  Ammonia 4.5  Ammonia 5.0  Ammonia 6.0
Carbon dioxide		Carbon dioxide 3.0  Carbon dioxide 4.5  Carbon dioxide 4.8  Carbon dioxide 5.3  Carbon dioxide SFC / SFE  Carbon dioxide SFE high purity
Carbon monoxide		Carbon monoxide 2.0  Carbon monoxide 3.0  Carbon monoxide 3.7  Carbon monoxide 4.7
Dichlorosilane		Dichlorosilane 2.0  Dichlorosilane 3.0
Disilane		Disilane 4.8
German		Germane 5.0
Germane in Hydrogen		1-2 % Germane, Balance Hydrogen
Nitrous oxide		Nitrous oxide 2.5  Nitrous oxide 4.5  Nitrous oxide 5.0
Silane in Nitrogen		1-2 % Silane, Balance Nitrogen
Silane in Helium		1-2 % Silane, Balance Helium
Silane in Hydrogen		1-2 % Silane, Balance Hydrogen
Silane		Silane 4.0  Silane 5.0
Silicon tetrafluoride		Silicon tetrafluoride 4.8