 |
Phosphine 5.0
| Impurities Phosphine 5.0, ppm: | | H2O |  | 1 | | O2 | | 1 | | N2 | | 3 | | CO | | 1 | | CO2 | | 1 | | HC | | 2 | | AsH3 | | 2 |
The percentages indicated in conjuction with purities are mole percents (ideal volume percentages) |
| Conversion factors Phosphine |
m³ gas
(15 °C, 1 bar) | Litre
liquid at Ts | kg | | 1 | 1,935 | 1,432 | | 0,517 | 1 | 0,74 | | 0,698 | 1,351 | 1 |
| Identification Phosphine 5.0 | | Cylinder shoulder color: | Yellow RAL 1018 | | Label: | Phosphine 5.0
| Valve outlet:
| W 21.80 x 1/14 LH, DIN 477 No. 1
|
| Applications Phosphine 5.0 | - doping of silicon per epitaxy, diffusion oder ion implantation. For this purpose mixtures with H2, Ar, He or N2 are preferably used (dopant gas mixtures)
- doping of Si and SiO2 during deposition (CVD)
- manufacturing of GaP, GaAsP or InP semiconductors
|
Mixtures of Phosphine with other gases in defined compositions.
|
|  |
|
|
|
|
|
