Search

Sitemap

Contact

Linde Nippon Sanso

Epitaxy & CVD

Ion Implantation

Lithography & Laser Systems

Optoelectronics & Compound Semiconductors

Photovoltaics & Solar Industry

R&D, high-k & low-k

Silicon Germanium (SiGe)

Wafer manufacturing

Silicon tetrafluoride 4.8


	Purity, %	> 99,998


	Download:	Product Datasheet Download Security Datasheet Download

	Offer:	Solicit a quotation


O₂		3
N₂		3
CO		3
CO₂		3
CH₄		10
The percentages indicated in conjuction with purities are mole percents (ideal volume percentages)

Delivery forms: Silicon tetrafluoride 4.8
	Capacity, liter	filling pressure, approx. bar	filling quantity, kg
Steel cylinder	2	18	0,2
Steel cylinder	10	18	1
Steel cylinder	50	63	22,7
Steel cylinder	50	18	5

Conversion factors Silicon tetrafluoride

m³ gas (15 °C, 1 bar)	Litre liquid at T_s	kg
1	2,643	4,388
0,378	1	1,66
0,228	0,602	1

Identification Silicon tetrafluoride 4.8
Cylinder shoulder color:	Yellow RAL 1018
Label:	Silicon tetrafluoride 4.8
Valve outlet:	1, DIN 477 No. 8

Properties Silicon tetrafluoride
Compressed gas, caustic, toxic
MAK value:	0.8 ppm (TLV)
Chemical symbol:	SiF₄
Molar mass:	104.08 g/mol
Critical temperature:	259 K (-14.15 °C)
Sublimation temperature on 1,013 bar:	177.95 K (-95.2 °C)
Relative density at 15°C, 1 bar (dryair = 1):	3.626

Applications Silicon tetrafluoride 4.8

deposition of fluorinated silicon oxide
ion implantation
dry etching of semiconductor materials

Mixtures of Silicon tetrafluoride with other gases in defined compositions.

Top pages

			Photovoltaics & Solar Industry
			Material Safety Data Sheets
			Electronic Gases
			Total Gas Management
			SDS / VAC
			R&D

News


			Linde Nippon Sanso moves headquarters to Munich
			European Photovoltaic Conference Sept 03-06, 2007 in Milano - Visit Linde Nippon Sanso
			Semicon Europa Oct. 09-11, 2007 in Stuttgart - Visit Linde Nippon Sanso
			Grand Opening - 15 Sept. 2006: LNS & Linde inaugurate the most advanced electronic gases production facility in Europe